Graphene resistance standards become even more user-friendly

The charge carrier density and the onset of the quantum Hall plateau can be tailored by adjusting the concentration of the molecular dopant F4-TCNQ during device fabrication. By this, no further treatment in the user's lab is necessary and it simplifies the use of graphene-based quantum Hall devices in resistance and impedance metrology. This is described in a new paper from the GIQS project.