Epitaxial graphene growth

Three research groups within the EMPIR GIQS project have started an investigation to find out the best parameters for the growth of high-quality epitaxial graphene layers. Scientists from CNRS-CHREA, KRISS and PTB exchanged silicon carbide substrates from different suppliers and investigate the epitaxial growth on untreated and pre-treated silicon carbide surfaces. The choice of the starting conditions has a crucial impact on the properties of the later graphene film. Goal is the fabrication of high-quality graphene layers which meet the metrological requirements of an impedance quantum standard. The image shows a typical graphite susceptor before closing and loading it into the growth chamber for sublimation growth of epitaxial graphene. The shown bottom part of the susceptor holds several mm-sized silicon carbide substrates which were cut before from larger commercially available wafers.