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Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation

29.02.2024

Single photon emitters in hexagonal boron nitride have gathered a lot of attention due
to their favourable emission properties and the manifold of possible applications. Despite
extensive scientic effort, the exact atomic origin of these emitters has remained unkown
thus far. Recently, several studies have tied the emission in the yellow spectral region
to carbon-related defects, but the exact atomic structure of the defects remains elusive.
In this study, photoluminescence emission and excitation spectroscopy is performed on a
large number of emitters within this region. By comparison of the experimental data with
theoretical predictions, the origin of yellow single photon emission in hexagonal boron nitrideis determined. Knowledge of this atomic structure and its optical properties is crucial for the reliable implementation of these emitters in quantum technologies.

Authors; Institutes:
Pablo Tieben; 4, Optik, PTB-Braunschweig; Institute for Solid State Physics, Gottfried Wilhelm Leibniz University, Appelstrasse 2, 30167 Hannover, Germany
Andreas W. Schell; 4, Optik, PTB-Braunschweig; Institute for Solid State Physics, Gottfried Wilhelm Leibniz University, Appelstrasse 2, 30167 Hannover, Germany; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria

Link to Publication:
https://doi.org/10.1002/adom.202302700

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Leiter der Presse- und Öffentlichkeitsarbeit

Dr. Dr. Jens Simon

Telefon: (0531) 592-3005
E-Mail:
jens.simon(at)ptb.de

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