15.10.2012
Figure 1: Sulfur K-edge spectra of a S/Ge(100) sample (solid line) treated for 30 s in (NH4)2S solution, and GeS (dash-dotted line), S(dotted line) and CuSO4 powder samples (dashed line). All spectra have been normalized to the high-energy part of the spectrum. The spectra have been shifted vertically for clarity [C. Fleischmann et al., Journal of The Electrochemical Society 158(5), H589-H594 (2011)].
The ‘2011 Norman Hackerman Young Author Award’ of the Electrochemical Society (ECS) was given to C. Fleischmann, S. Couet (both KU Leuven, Belgium), P. Hönicke (PTB Berlin) and K. Schouteden (IMEC, Belgium). Their 
publication in the Journal of The Electrochemical Society on "Towards Passivation of Ge(100) surfaces by Sulfur Adsorption from a (NH4)2S Solution: A Combined NEXAFS, STM and LEED Study" was awarded at the ECS Meeting in Honolulu (Hawaii) on October 8th, 2012. The ECS Norman Hackerman Young Author Award was established in 1928 and is awarded annually to the two best papers published in the Journal of The Electrochemical Society.
Multiple analytical techniques were used to study the sulfur surface passivation layer on Ge(100) surfaces. This is a major issue for the introduction of Germanium to the high performance semiconductors. X-ray spectrometry based research was performed in the BESSY laboratory of PTB in Berlin within a transnational access collaboration in the European integrated infrastructure project ANNA. P. Hönicke received a master’s degree in electrical engineering and micro systems technology from the Technical University of Berlin during the ANNA project and is currently employed as a Ph.D. student in a follow-up project of the European Metrology Research Program (EMRP).
Contact:
B. Beckhoff, 7.24, e-mail: 
Burkhard.Beckhoff(at)ptb.de