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PTB's EUV reflectometer has moved to the EUV beamline at the MLS


European enterprises are world leaders in developing EUV lithography (EUVL). Starting approximately in 2016, it should be possible to use EUVL at a wavelength of 13.5 nm to manufacture semiconductor chips. PTB has supported this development since 1998 by providing the EUV measuring technology – originally at its laboratory at the electron storage ring BESSY I and since 2000 at BESSY II in order to improve the quality of the respective lens systems (manufactured by the Carl Zeiss company, among others) in the lithography machines. During this year's shut-down period at BESSY II in August and September, the EUV reflectometer which is used for this purpose was transferred to the Metrology Light Source (MLS) and was already commissioned there in mid-September. First measurements for customers from industry (characterizing photomasks for Toppan Photomasks, Inc. in Dresden) could thus be resumed before BESSY II's shutdown was completed. By moving the EUV reflectometer to the EUV beamline of PTB's MLS, this type of measurement can now be provided continuously, i.e. without interruptions caused by shut-down periods at BESSY II.


F. Scholze, 7.12, e-mail: Opens window for sending emailFrank.Scholze(at)ptb.de