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Agreement on EUV reflectometry with ZEISS extended for another four years


The metrological support of the German and European industries in the development of EUV lithography for semiconductor manufacturing is a major activity of PTB at its Berlin-Adlershof site. The close cooperation with ZEISS since 1998 forms a significant basis for the continuous development of PTB's metrological capabilities in the extreme ultraviolet spectral range (EUV). Based on the use of synchrotron radiation, PTB develops new metrological solutions, e.g., for semiconductor technologies. This includes radiometry, reflectometry, and scatterometry as well as combinations of these and other analytical procedures to hybrid methods. Our measurement services are available to PTB's numerous cooperation partners from research institutes and industry.

By signing the 9th supplement to the original agreement, the cooperation with ZEISS has been extended until 2024. During the term of the contract, the spectral and spatial purity of the monochromatized radiation is to be improved by modernizing the EUV beamline in the PTB laboratory at BESSY II. The development of novel measurement approaches (based on PTB’s well-established measurement techniques) for the investigation of structured surfaces will benefit from the upgraded beamline. Compared to visible light, the shorter wavelength in the EUV opens up new possibilities for the measurement of nanostructures on semiconductor materials. In addition to the wavelength range around 13.5 nm - important for lithography - the working range of this beamline includes the spectral range of the "water window" (2.3 nm to 4.4 nm). Over the entire spectral range of the beamline, PTB develops microscopic analysis methods for semiconductor technology, which may also become relevant for other fields of technology such as medical technology in the future.


M. Kolbe, 7.12, E-Mail: Opens window for sending emailMichael.Kolbe(at)ptb.de