Brief description of the Method
Total reflection X-ray fluorescence (TXRF) analysis is a well-established method to monitor lowest level contamination on semiconductor surfaces. We operate dedicated instrumentation for analyzing light element contamination on wafer pieces as well as wafer surfaces with a diameter of up to 300 mm.
Due to the use of calibrated instrumentation and the knowledge of the effective solid angle [1], traceable quantitative results can be obtained without the need of any calibration standard [1,2].
Expertise
- Analytic capabilities for full wafer analysis (diameters from 2” up to 300 mm)
- Reference-free quantification
Applications
- Monitoring of surface contaminations
- Both organic and inorganic contaminations detectable
- Discrimination between layer-like - and particle-like contaminations
- Chemical speciation with NEXAFS
Specifications
- Elements with Z ≥ 5 detectable
- Sample sizes up to 300 mm for silicon wafers and 4” for other wafers
Research Highlights
- Highly sensitive detection of organic [3] and inorganic Contamination [4]
References
-
Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation, Anal. Chem. (2007) 79, 7873-7882 - Complementary Metrology within a European Joint Laboratory, Solid State Phenomena (2009) 145-146, 97-100
- Reference Samples for Ultra Trace Analysis of Organic Compounds on Substrate Surfaces, Solid State Phenomena (2012) 187, 295-298
- Reliable quantification of inorganic contamination by TXRF, Solid State Phenomena (2012) 187, 291-294