Profile
The working group EUV-Radiometry develops metrology for the characterization of optical components and radiation detectors and the measurement of material properties of materials in the spectral range from 1 nm to 40 nm. The investigations cover optical components for the semiconductor lithography in the EUV spectral range and the development of EUV scattering methods for the characterization of nano-structured surfaces. The group uses two monochromator beamlines at the storage rings BESSY II and MLS. It operates a large EUV reflectometer for large optical components like EUV collector mirrors for plasma sources and an EUV Ellipso-Scatterometer (see picture) for the measurement of reflection and scattering under arbitrary polarization conditions.
Research/Development
- Methods for the characterization of nano-structured surfaces by EUV scattering
- “at-wavelength“ characterization for EUV optical components
- Characterization of surface and interface roughness of multilayer mirrors by diffuse EUV scattering
- Support of partners from industry and science with metrological capabilities and know-how within joint research projects
- Lifetime investigations at optical components and radiation detectors
Services
The following calibrations according to the quality management handbook of PTB division 7 are performed in the working group 7.12:
- spectral responsivity of radiation detectors with traceability to cryogenic radiometer
- spectral reflectance and transmittance
- spectral detection efficiency for photons (energy dispersive X-ray detectors