For binary-divided series arrays we use SNS or SINIS junctions consisting of a multilayer of Superconductor / Normal metal / Superconductor or Superconductor / Insulator / Normal metal / Insulator / Superconductor, respectively. We fabricate these arrays in the clean room center of PTB using thin film technology. The current-voltage-characteristic of a 1 V series array clearly shows wide constant-voltage steps under microwave irradiation of a frequency of 70 GHz. (cf. 10 V arrays).

Current-voltage-characteristic and photo of a 1 V series array consisting of 8192 SINIS junctions divided into a binary sequence.