Lithography with the Scanning-Transmission-Electronmicroscope (STEM)
By use of the STEM very narrow lines with lateral dimensions < 10 nm can be fabricated. A disadvatage is the difficult preparation of the necessary membran substrates.
Transmission-Electronmicroscope micrograph of an 8 nm wide metallic line
Transmission-Electronmicroscope micrograph of a SET-transistor