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Single-charge Circuits

Working Group 2.42

Fabrication of metallic sub-µm devices

Lithography with the Scanning-Transmission-Electronmicroscope (STEM)

By use of the STEM very narrow lines with lateral dimensions < 10 nm can be fabricated. A disadvatage is the difficult preparation of the necessary membran substrates.

Transmission-Electronmicroscope micrograph of an 8 nm wide metallic line


Transmission-Electronmicroscope micrograph of a SET-transistor