One of the most important new components on the market of computer memories is called MRAMs (magnetic random access memories). Similar to the well-known Flash memories, they enable non-volatile information storage, i. e. the data remain stored in the memory upon power-off. As an important advantage over Flash memories, MRAMs offer signifi cantly shorter access times and an unlimited number of writing cycles. Commercial MRAMs have been on the market since 2005. They are, however, still slower than their competitors One of the most important new components on the market of computer memories is called MRAMs (magnetic random access memories). Similar to the well-known Flash memories, they enable non-volatile information storage, i. e. the data remain stored in the memory upon power-off. As an important advantage over Flash memories, MRAMs offer signifi cantly shorter among the volatile storage media. But PTB has now invented something to change this: a special on-chip wiring, combined with the dynamic control of the magnetic components, reduces the response time from 2 ns to less than 500 ps.
Ultrafast MRAMs
Contact
Hans Werner Schumacher
Department 2.5 Semiconductor Physics and Magnetism
phone: +49 (0) 531 592-2500
e-mail: hans.w.schumacher(at)ptb.de