Reference objects with extremely sharp edges
Using an anisotropic etching process, a <111> wafer is applied as a second silicon layer underneath a silicon wafer with a <110> crystal orientation designed to serve as an etch-stop layer. By means of a lithographic process, it is possible to produce test standards from this silicon-on-silicon compound. These standards may vary in terms of the width of their grooves and the sharpness of their edges and may also have vertical flanks and flat bases. The first example of an application using these standards is to examine stylus tips in accordance with standards in order to measure their roughness by means of tactile procedures. (Technology Offer 496)
generating sharp edges
grooves with a high aspect ratio and a flat base
implementation conforming to standards
Contact person for questions about technology transfer
Andreas Barthel, Phone: +49 531 592-8307, andreas.barthel(at)ptb.de, www.technologietransfer.ptb.de/en