Grazing incidence X-Ray Fluorescence (GIXRF)

Brief description of the Method

Grazing Incidence X-Ray Fluorescence (GIXRF) analysis relies on the incident angle dependent penetration depth. GIXRF provides excellent conditions for the characterization of 3-dimensional elemental distributions on flat surfaces, the determination of elemental depth profiles as well as the distinct analysis of a buried layer or an interface. On flat samples, the X-ray Standing Wave (XSW) field is used as a tuneable depth sensor depending on either the incident angle or the incident photon energy.

The PTB applies the GIXRF technique to a wide range of samples and scientific problems by employing the reference-free XRF approach and the available instrumentation for sample sizes from a few centimeters up to 300 mm silicon wafers.

Expertise

• Reference-free, quantitative elemental depth profiling
• Simultaneous analysis with GIXRF and X-ray reflectometry
• Distinct analysis of interfacial layers possible
• Complete modelling incl. XSW-simulation

Applications

• Elemental depth profiling in the nanometer range
• Surface and buried layer characterization
• Analysis of Nanoparticles

Specifications

• Elements with Z ≥ 5 detectable, sensitivities comparable to TXRF
• Sample sizes up to 300 mm Si-wafers
• Chemical speciation possible in combination with NEXAFS

Research Highlights

• Determination of the binding angle of self-assembled monolayers on germanium [1]
• Characterization of ultra shallow and other ion implantations into various matrices [2,3]
• Characterization of 3-dimensional elemental distributions on flat surfaces [4]
• Distinct analysis of a buried layers and interfaces [5]
• Buried layer characterization [6]