XRF and TXRF Instrumentation
PTB operates dedicated XRF and TXRF instrumentation at its PGM-U49 beamline for various
applications ranging from wafer surface contamination analysis over
fundamental atomic parameter determinations to nanolayer characterisations.
XRF and TXRF Instrumentation at the PGM-U49 beamline
| Wafer size: | 200 mm (8”) Si wafer and 300 mm (12”) Si wafer |
| Detection geometry: | 45° observation viz. detection angle |
| Grazing incidence angle (Φ): | 0° to 45°, resolution 0.001°, allowing TXRF, GIXRF and XRF |
| Sample translation: | > 150 mm vertical (┴ to beam direction) |
| Sample rotation: | ± 200°, thus the whole wafer surface is accessible |
| Si(Li) detector for (T)XRF: | energy resolution 89 eV to 138 eV with increasing photon energy, distance to sample surface ranges from 5 mm to 200 mm |
| Additional (T)XRF detector: | windowless silicon drift detector, high count-rate capability for NEXAFS studies |
Table 1 Operational parameters of PTB's installation for (T)XRF analysis on 200 mm and 300 mm Si wafers.
| Sample size: | up to 75 mm (standard sizes 5 mm, 10 mm, 15 mm to 30 mm, 50 mm) |
| Standard XRF geometry: | 45°; incidence angle and 45° observation viz. detection angle |
| Grazing incidence angle (Φ): | 0° to 5°, resolution 0.01°, beam geometry for TXRF and GIXRF experiments |
| Sample translations: | 100 mm horizontal (┴ to beam direction), ± 17 mm vertical (┴ to beam direction) |
Table 2 Operational parameters of PTB's reference-free XRF instrumentation.
| Photon energy range: | 78 eV to 1860 eV, thus including the Si-L and K absorption edges |
| Photon flux: | up to 1012 s-1 |
| Resolving power: | ranging from 103 to 104 depending on the photon energy, on the exit slit size (0.04 mm to 0.6 mm) and on the selected Cff parameter |
| High spectral purity, higher order contributions: |
< 10-2 |
| Spot size: | 0.14 mm horizontally and 0.04 mm to 0.6 mm vertically |
Table 3 Operational parameters of the PGM-U49 beamline.
