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The new molecular beam epitaxy system ( model “Compact 21 HM“) will start operation in 2007. This MBE is especially designed for the growth of ultra-clean GaAs crystals. It allows us to fabricate special heterostructures for the investigation of single-electron transport.
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In particular striking is the huge cryo pump which produces an extremely good vacuum in the growth chamber. This remarkably improves the quality of the crystals grown therein. |
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The new MBE-2 with a vertical design
Click for enlarged picture
(JPG 296 KB)
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At the moment the complete MBE system is baking at temperatures above 200°C for serveral weeks in order to evaporate and pump adsorbed residual gases.
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Bake out of the complete MBE system
Click for enlarged picture
(JPG 266 KB)
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Here is an Introduction to Molecular Beam Epitaxy...
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