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Semiconductor crystals on the basis of gallium arsenide are grown with an MBE system (model "Modular Gen II"). In addition to Gallium, Arsenide and Aluminium sources there are Silicon and Beryllium sources for n- and p-doping and an Indium source. Substrates with a maximum diameter of 3 inches can be handled.
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Vacuum load lock part of the MBE system
Clean semiconductor substrates ("wafers") are further preprocessed in a multi stage load lock system before being transferred into the growth chamber.
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Transfer of a substrate wafer into the MBE system
Click for enlarged picture
(JPG 132 KB)
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MBE growth chamber
After transfer into the growth chamber, layers of
semiconductor material are
grown onto the substrates at
typical temperatures of
around 600°C. This process
is controllable down to the level of one atomic layer.
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MBE growth chamber
Click for enlarged picture (JPG 157 KB) |
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| A new molecular beam epitaxy system MBE 2 will start operation in 2007. |
