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Development of a scatterometry reference standard

Author(s): B. Bodermann, B. Loechel, F. Scholze, G. Dai, J. Endres, J. Probst, M. Schoengen, M. Krumrey, P. E. Hansen and V. Soltwisch
Journal: Proc. SPIE 9132
Year: 2014
Month: May
Day: 1
Event name: Optical Micro- and Nanometrology V
Event place: Brussels, Belgium
Event date: April 14, 2014
DOI: 10.1117/12.2052278
Abstract: Scatterometry is a common technique for dimensional characterisation of nanostructures in the semiconductor industry. Currently this technique is limited to relative measurements for process development and process control. Although the high sensitivity of scatterometry is well known, it is not yet applied for absolute measurements of critical dimensions (CD) and quality control due to the lack of traceability. Thus we aim to establish scatterometry as traceable and absolute metrological method for dimensional measurements. Suitable high quality calibrated scatterometry reference standard samples are currently developed as one important step to enable traceable absolute measurements in industrial applications. The reference standard materials will base either on Si or on Si3N4. A traceable calibration of these standards will be provided by applying and combining different scatterometric as well as imaging calibration methods. First Silicon test samples have been manufactured and characterised for this purpose. The etched Si gratings have periods down to 50 nm and contain areas of reduced density to enable AFM measurements for comparison. We present the current design and first characterisations of structure details and the grating quality based on AFM measurements, optical, EUV and X-Ray scatterometry as well as spectroscopic ellipsometry. Finally we discuss possible final designs and the aimed specifications of the standard samples to face the tough requirements for future technology nodes in lithography. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

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