Vortrag

Datum:		30.01.2006
Uhrzeit:		11:00 Uhr
Ort:		Hermann-von-Helmholtz-Bau, Hörsaal Physikalisch-Technische Bundesanstalt Institut Berlin Abbestraße 2-12, 10587 Berlin Tel.: 3481-7454, 3481-0
Titel:		Dynamics of Power Dissipation in Technologically used Plasmas
Vortragender:		Dr. Timo Gans Institut für Experimentalphysik V: Plasma- und Atomphysik, Ruhr-Universität Bochum

Abstract:		Non-equilibrium low temperature plasmas, in particular radio-frequency (rf) discharges, are widely used for technological applications. Increased demands on plasma technology, particularly from the micro-electronics industry, have resulted in the development of various types of discharges based on different power coupling mechanisms. Despite this, the complexity of these mechanisms is not yet fully understood. Insight into power dissipation requires temporal resolution on various time scales, in particular the dynamics within the rf cycle. Laser spectroscopy and phase resolved emission spectroscopy (PROES) provide excellent spatial and temporal resolution on a nano-second time scale. Electric field measurements using Fluorescence-Dip-Spectroscopy yield spatial information on the dynamics of charged particles in the plasma boundary sheath adjacent to surfaces. The combination with PROES allows detailed investigations on electron heating mechanisms. Mechanisms of power dissipation are discussed for a variety of rf discharges: capacitively coupled plasmas (CCP), dual-frequency CCP (2f-CCP), inductively coupled plasmas (ICP), magnetic neutral loop discharge (NLD).
Veranstalter:		Abteilung 7