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Extension of the agreement on EUV reflectometry with Carl Zeiss SMT GmbH until the end of 2020

09.08.2016

One focus of the technical work in the EUV Radiometry Working Group is the metrological support rendered to the German and European supply industry for semiconductor manufacturing in the development of EUV lithography in a great number of cooperation agreements. In 1998, the cooperation with Carl Zeiss SMT GmbH set the starting point for this field of work and has, since then, formed the basis for the constant expansion of the metrological capabilities of PTB in the fields of EUV reflectometry, radiometry and scatterometry which is reflected in an ever larger number of cooperation partners with an ever wider range of metrological tasks. With the signing of the now 8th supplement to the original agreement, the cooperation with Zeiss has been extended until the end of 2020. In this time, PTB will further develop its capabilities in reflectometry by setting up and putting into use a large new reflectometer with a hydrocarbon-free vacuum system with improved sample positioning. In addition, the set-up of an EUV telescope system, with the aid of which the spatial resolution on the surface of the optical components shall be improved to approximately 10 µm, is close to completion. This will be of benefit especially to the development of novel measurement procedures based of EUV reflectometry and scatterometry for the investigation of structured surfaces. Due to the short wavelength used, these procedures could in future complement or replace optical scatterometry in structure measurements on semiconductor wafers.

Contact:

F. Scholze, 7.12, e-mail: Opens window for sending emailFrank.Scholze(at)ptb.de