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Molecular Beam Epitaxy (MBE)

Working Group 2.53

Molecular Beam Epitaxy MBE 1

Semiconductor crystals on the basis of gallium arsenide are grown with an MBE system (model "Modular Gen II"). In addition to Gallium, Arsenide and Aluminium sources there are Silicon and Beryllium sources for n- and p-doping and an Indium source. Substrates with a maximum diameter of 3 inches can be handled.

Vacuum load lock part of the MBE system


Clean semiconductor substrates ("wafers") are further preprocessed in a multi stage load lock system before being transferred into the growth chamber.




Transfer of a substrate wafer into the MBE system
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(JPG 132 KB)

MBE growth chamber


After transfer into the growth chamber, layers of semiconductor material are grown onto the substrates at typical temperatures of around 600°C. This process is controllable down to the level of one atomic layer.


MBE growth chamber
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A new molecular beam epitaxy system MBE 2 will start operation in 2007.