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Fertigungskette von Si-Kugeln und interferometrische Bestimmung des Kugelvolumens

AFM Strukturbreiten-Metrologie

Arbeitsgruppe 5.23

Profil

The objective of the working group is to develop traceable three-dimensional (3D) nanometrology for versatile applications of nanotechnologies.  True 3D metrology of nano structures including form (width, height, edge slope, corner rounding and footing) and line edge/width roughness is one of the most challenging metrology tasks today, especially the structure width which is usually referred to as the critical dimension (CD) in semiconductor industry. The tasks of the work group include the developments of CD/3D atomic force microscopes (AFMs) for non-destructive 3D nanometrology, High Resolution Transmission Electron Microscope (HR-TEM) based 3D reference nano metrology with traceability via silicon crystal lattice, reference standards, as well as calibration services.

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Forschung/Entwicklung

Progressive miniaturisation in nanomanufacturing is delivering ever smaller nanodevices with more complicated 3D structure and material composition. For instance, the pace of feature size reduction in the semiconductor industry is now approaching technology nodes below 22 nm. For quality control and process monitoring, metrology of 3D structures of both silicon wafers and photomasks is required with a desired uncertainty of less than 1 nm. True 3D metrology of these structures including form (width, height, edge slope, corner rounding and footing) and line edge/width roughness is one of the most challenging metrology tasks today, especially the structure width which is usually referred to as the critical dimension (CD) in semiconductor industry.

Main focus of the research:

  • Developments of high resolution CD/3D AFMs
  • Development of new 3D AFM probing techniques
  • Atomic resolution traceable CD reference metrology based on HR-TEM
  • AFM tip characterisation
  • Development of new CD standards 
  • Calibration of standards at the highest level.

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Dienstleistungen

Measurements and calibrations of e.g. feature width, sidewall angle, line edge roughness, sidewall profile etc. can be performed. Selected measurement examples are demonstrated.

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Informationen

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